28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. [1]. A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.

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The A0 to A5 inputs are used to specify which bytes within the page are to be written.

28C256 – 28C256 256K 250ns Parallel EEPROM Technical Data

The bytes may be loaded in any order and may be adtasheet within the same load period. Input Test Waveforms and Measurement Level. The entire device can be erased using a 6-byte software code.

If precautions are not taken, inad- vertent writes may occur during transitions of the host sys- tem power supply. Address to Output Delay. After writing the 3-byte command sequence and after t. Once a byte write has been started it will automatically time itself to completion.

CE may be delayed up to t.

Fast Write Cycle Times. When the device is deselected, the CMOS standby current is less than By datashewt A9 to 12V. The outputs are put in the high impedance state when either CE or OE is high. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. All command se- quences must conform to the page write timing specifica- tions. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs.


Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

28C (ATMEL) – k 32k X 8 Paged Cmos E2prom | eet

OE to Output Delay. The page write operation of the AT28C allows 1 to bytes of data to be written into the device during a single internal programming period.

This is done by pre- ceding the data to be written by the same 3-byte command sequence used to enable SDP.

The device contains a byte page register to allow writ- ing of up to bytes simultaneously. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.

Refer to Datashret Programming Waveforms. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.

DATA Polling may begin at anytime during the write cycle. PROM for device identification or tracking.

28C256 – 28C256 256K 250ns Parallel EEPROM Datasheet

All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 63 addi- tional bytes. An optional software data protection mechanism is available to guard against inad- vertent writes.


Each successive byte must be written within During a write cycle, the addresses and 1 to bytes of data are internally latched, freeing the address and data bus for other opera- tions. Automatic Page Write Operation. Manufac- tured darasheet Atmel’s advanced nonvolatile CMOS technology, the device offers access times to ns with power dissipation of just mW.

28C 데이터시트(PDF) – ATMEL Corporation

No data will be written to the device; however, for the duration of t. When enabled, the software data protection SDPwill prevent inadvertent writes. Once the end of a write cycle has been detected a new access for a read or write can begin.